| PART |
Description |
Maker |
| IS61DDP2B21M18A/A1/A2 IS61DDP2B251236A/A1/A2 |
1Mx18, 512Kx36 18Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7J161882B |
(K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM
|
Samsung semiconductor
|
| K7N161845M K7N163645M |
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM 512Kx36
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7Q163652A K7Q161852A |
512Kx36 & 1Mx18 QDRTM b2 SRAM
Electrical Outlet Connector; Voltage Rating:125V; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes 512Kx36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| IS61QDPB251236A IS61QDPB251236A1 IS61QDPB251236A2 |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
| IS61QDB41M18A IS61QDB451236A |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
| K7N163645MK7N161845M |
512Kx36 & 1Mx18 Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| K7K1618U2C K7K1636U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7Q161862B |
(K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|
